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HiPerFET TM
Power MOSFETs
IXFX 120N20
IXFK 120N20
V DSS
I D25
R DS(on)
= 200 V
= 120 A
= 17 m ?
Single MOSFET Die
Preliminary data sheet
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
PLUS 247 TM (IXFX)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
200
200
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
D
(TAB)
I D25
I D104
I DM
I AR
T C
T C
T C
T C
= 25 ° C (MOSFET chip capability)
= 104 ° C (External lead capability)
= 25 ° C, pulse width limited by T JM
= 25 ° C
120
76
480
120
A
A
A
A
TO-264 AA (IXFK)
E AR
E AS
dv/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
64
3
15
560
mJ
J
V/ns
W
G
D
G = Gate
S = Source
S
(TAB)
D = Drain
TAB = Drain
T J
-55 ... +150
° C
T JM
T stg
150
-55 ... +150
° C
° C
Features
? International standard packages
T L
1.6 mm (0.063 in.) from case for 10 s
300
° C
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
M d
Mounting torque
TO-264
0.9/6 Nm/b.in.
? Unclamped Inductive Switching (UIS)
Weight
PLUS 247
TO-264
6
10
g
g
rated
? Low package inductance
- easy to drive and to protect
? Fast intrinsic rectifier
Applications
? DC-DC converters
Symbol
V DSS
Test Conditions
V GS = 0 V, I D = 3mA
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
200 V
? Battery chargers
? Switched-mode and resonant-mode
power supplies
? DC choppers
? AC motor control
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 8mA
V GS = ± 20 V, V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 0.5 ? I D25
T J = 25 ° C
T J = 125 ° C
2.0
4.0 V
± 200 n A
100 μ A
2 mA
17 m ?
? Temperature and lighting controls
Advantages
? PLUS 247 TM package for clip or spring
mounting
? Space savings
Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2002 IXYS All rights reserved
? High power density
98636-B (9/02)
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相关代理商/技术参数
IXFK120N20P 功能描述:MOSFET 120 Amps 200V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK120N25 功能描述:MOSFET 120 Amps 250V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK120N25P 功能描述:MOSFET 120 Amps 250V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK120N30P3 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK120N30T 功能描述:MOSFET 120A 300V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK140N20P 功能描述:MOSFET 140 Amps 200V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK140N25T 功能描述:MOSFET TRENCH HIPERFET PWR MOSFET 250V 140A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK140N30P 功能描述:MOSFET 140 Amps 300V 0.024 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube